IRF9640 P Channel MOSFET

IRF9640 P Channel MOSFET

৳  60.50

Drain to Source Breakdown Voltage, VDS: -200 V
Drain to Gate Voltage (RGS = 20kW), VDGR :-200 V
Continuous Drain Current, ID:-11A
Pulsed Drain Current, IDM :-44 A
Gate to Source Voltage, VGS: ±20 V
Maximum Power Dissipation, PD: 125 W

Available : 10 Sold : 0

10 in stock

SKU: 685377477711 Category:


These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits. Formerly developmental type TA17522.


11A, 200V
rDS(ON)= 0.500Ω
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature – TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

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