IRFZ44N MOSFET

IRFZ44N MOSFET

৳  40.54

Gate-to-Source Voltage ± 20 V
Avalanche Current 25 A
Power Dissipation 94 W
Repetitive Avalanche Energy 9.4 mJ
Peak Diode Recovery dv/dt ƒ 5.0 V/ns

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10 in stock

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SKU: 786786735353 Category:

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Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

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